Electrical Activity of Extended Defects in Multicrystalline Silicon
- Authors: Pescherova S.M.1, Yakimov E.B.2, Nepomnyashchikh A.I.1, Pavlova L.A.1, Feklisova O.V.2, Presnyakov R.V.1
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Affiliations:
- Vinogradov Institute of Geochemistry, Siberian Branch
- Institute of Microelectronics Technology and High Purity Materials
- Issue: Vol 52, No 2 (2018)
- Pages: 254-259
- Section: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202483
- DOI: https://doi.org/10.1134/S1063782618020124
- ID: 202483
Cite item
Abstract
The excess carrier lifetime (τ) distribution in multicrystalline silicon grown by the Bridgman technique from high-purity metallurgical silicon (HPMG-Si) is studied. The features of the variation in τ, caused by the grain-boundary structure of ingots, are revealed. The grain boundaries, dislocations, and impurity microinclusions are studied by electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) using selective acid etching. The electrical activity of extended defects is measured by the electronbeam- induced-current (EBIC) method.
About the authors
S. M. Pescherova
Vinogradov Institute of Geochemistry, Siberian Branch
Author for correspondence.
Email: spescherova@mail.ru
Russian Federation, Irkutsk, 664033
E. B. Yakimov
Institute of Microelectronics Technology and High Purity Materials
Email: spescherova@mail.ru
Russian Federation, Chernogolovka, 142432
A. I. Nepomnyashchikh
Vinogradov Institute of Geochemistry, Siberian Branch
Email: spescherova@mail.ru
Russian Federation, Irkutsk, 664033
L. A. Pavlova
Vinogradov Institute of Geochemistry, Siberian Branch
Email: spescherova@mail.ru
Russian Federation, Irkutsk, 664033
O. V. Feklisova
Institute of Microelectronics Technology and High Purity Materials
Email: spescherova@mail.ru
Russian Federation, Chernogolovka, 142432
R. V. Presnyakov
Vinogradov Institute of Geochemistry, Siberian Branch
Email: spescherova@mail.ru
Russian Federation, Irkutsk, 664033