Electrical Activity of Extended Defects in Multicrystalline Silicon
- 作者: Pescherova S.1, Yakimov E.2, Nepomnyashchikh A.1, Pavlova L.1, Feklisova O.2, Presnyakov R.1
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隶属关系:
- Vinogradov Institute of Geochemistry, Siberian Branch
- Institute of Microelectronics Technology and High Purity Materials
- 期: 卷 52, 编号 2 (2018)
- 页面: 254-259
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/202483
- DOI: https://doi.org/10.1134/S1063782618020124
- ID: 202483
如何引用文章
详细
The excess carrier lifetime (τ) distribution in multicrystalline silicon grown by the Bridgman technique from high-purity metallurgical silicon (HPMG-Si) is studied. The features of the variation in τ, caused by the grain-boundary structure of ingots, are revealed. The grain boundaries, dislocations, and impurity microinclusions are studied by electron probe microanalysis (EPMA) and scanning electron microscopy (SEM) using selective acid etching. The electrical activity of extended defects is measured by the electronbeam- induced-current (EBIC) method.
作者简介
S. Pescherova
Vinogradov Institute of Geochemistry, Siberian Branch
编辑信件的主要联系方式.
Email: spescherova@mail.ru
俄罗斯联邦, Irkutsk, 664033
E. Yakimov
Institute of Microelectronics Technology and High Purity Materials
Email: spescherova@mail.ru
俄罗斯联邦, Chernogolovka, 142432
A. Nepomnyashchikh
Vinogradov Institute of Geochemistry, Siberian Branch
Email: spescherova@mail.ru
俄罗斯联邦, Irkutsk, 664033
L. Pavlova
Vinogradov Institute of Geochemistry, Siberian Branch
Email: spescherova@mail.ru
俄罗斯联邦, Irkutsk, 664033
O. Feklisova
Institute of Microelectronics Technology and High Purity Materials
Email: spescherova@mail.ru
俄罗斯联邦, Chernogolovka, 142432
R. Presnyakov
Vinogradov Institute of Geochemistry, Siberian Branch
Email: spescherova@mail.ru
俄罗斯联邦, Irkutsk, 664033