Degradation of the parameters of transistor temperature sensors under the effect of ionizing radiation
- Авторлар: Vikulin I.M.1, Gorbachev V.E.1, Kurmashev S.D.1
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Мекемелер:
- Odessa National Academy of Communication
- Шығарылым: Том 51, № 10 (2017)
- Беттер: 1354-1359
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/201405
- DOI: https://doi.org/10.1134/S1063782617100190
- ID: 201405
Дәйексөз келтіру
Аннотация
The influence of the effective concentration of an impurity specifying the conduction type of the base region and the base thickness on the radiation resistance of transistor temperature sensors is investigated. The dependences of the forward voltage drop at the emitter transistor junction and current amplification factor on the magnitude of electron, neutron, and γ-quanta flows are revealed. It is found that degradation of the forward voltage drop under the effect of ionizing radiation begins at doses higher by almost two orders of magnitude than the current amplification factor depending on the transistor’s design features. The reproducibility of the temperature-sensitive parameter, which increases the yield percentage of suitable devices, increases after annealing of the electron-irradiated structures.
Авторлар туралы
I. Vikulin
Odessa National Academy of Communication
Хат алмасуға жауапты Автор.
Email: physonat@gmail.com
Украина, Odessa, 65029
V. Gorbachev
Odessa National Academy of Communication
Email: physonat@gmail.com
Украина, Odessa, 65029
Sh. Kurmashev
Odessa National Academy of Communication
Email: physonat@gmail.com
Украина, Odessa, 65029
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