Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice
- Авторлар: Grashchenko A.1, Feoktistov N.1,2, Osipov A.1,3, Kalinina E.2, Kukushkin S.1,3,4
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Мекемелер:
- Institute of Problems of Mechanical Engineering
- Ioffe Physical–Technical Institute
- ITMO University
- Peter the Great St. Petersburg Polytechnic University
- Шығарылым: Том 51, № 5 (2017)
- Беттер: 621-627
- Бөлім: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199882
- DOI: https://doi.org/10.1134/S1063782617050086
- ID: 199882
Дәйексөз келтіру
Аннотация
Data obtained in an experimental study of the photoelectric characteristics of silicon–silicon carbide structures grown by the atomic substitution method on silicon (100) and (111) substrates are presented. It is found that the maximum sunlight conversion efficiency of a silicon–silicon carbide (silicon carbide–silicon) heterojunction is 5.4%. The theory of dilatation dipole formation upon synthesis by the atomic substitution method is used to account for the mechanism of electrical barrier formation at the silicon–silicon carbide interface.
Авторлар туралы
A. Grashchenko
Institute of Problems of Mechanical Engineering
Хат алмасуға жауапты Автор.
Email: asgrashchenko@bk.ru
Ресей, St. Petersburg, 199178
N. Feoktistov
Institute of Problems of Mechanical Engineering; Ioffe Physical–Technical Institute
Email: asgrashchenko@bk.ru
Ресей, St. Petersburg, 199178; St. Petersburg, 194021
A. Osipov
Institute of Problems of Mechanical Engineering; ITMO University
Email: asgrashchenko@bk.ru
Ресей, St. Petersburg, 199178; St. Petersburg, 197101
E. Kalinina
Ioffe Physical–Technical Institute
Email: asgrashchenko@bk.ru
Ресей, St. Petersburg, 194021
S. Kukushkin
Institute of Problems of Mechanical Engineering; ITMO University; Peter the Great St. Petersburg Polytechnic University
Email: asgrashchenko@bk.ru
Ресей, St. Petersburg, 199178; St. Petersburg, 197101; St. Petersburg, 195251