Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice
- Authors: Grashchenko A.S.1, Feoktistov N.A.1,2, Osipov A.V.1,3, Kalinina E.V.2, Kukushkin S.A.1,3,4
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Affiliations:
- Institute of Problems of Mechanical Engineering
- Ioffe Physical–Technical Institute
- ITMO University
- Peter the Great St. Petersburg Polytechnic University
- Issue: Vol 51, No 5 (2017)
- Pages: 621-627
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://journals.rcsi.science/1063-7826/article/view/199882
- DOI: https://doi.org/10.1134/S1063782617050086
- ID: 199882
Cite item
Abstract
Data obtained in an experimental study of the photoelectric characteristics of silicon–silicon carbide structures grown by the atomic substitution method on silicon (100) and (111) substrates are presented. It is found that the maximum sunlight conversion efficiency of a silicon–silicon carbide (silicon carbide–silicon) heterojunction is 5.4%. The theory of dilatation dipole formation upon synthesis by the atomic substitution method is used to account for the mechanism of electrical barrier formation at the silicon–silicon carbide interface.
About the authors
A. S. Grashchenko
Institute of Problems of Mechanical Engineering
Author for correspondence.
Email: asgrashchenko@bk.ru
Russian Federation, St. Petersburg, 199178
N. A. Feoktistov
Institute of Problems of Mechanical Engineering; Ioffe Physical–Technical Institute
Email: asgrashchenko@bk.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 194021
A. V. Osipov
Institute of Problems of Mechanical Engineering; ITMO University
Email: asgrashchenko@bk.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 197101
E. V. Kalinina
Ioffe Physical–Technical Institute
Email: asgrashchenko@bk.ru
Russian Federation, St. Petersburg, 194021
S. A. Kukushkin
Institute of Problems of Mechanical Engineering; ITMO University; Peter the Great St. Petersburg Polytechnic University
Email: asgrashchenko@bk.ru
Russian Federation, St. Petersburg, 199178; St. Petersburg, 197101; St. Petersburg, 195251