Effect of ionic Ag +  transfer on localization of metal-assisted etching of silicon surface

O. V. Pyatilova; A. V. Sysa; S. A. Gavrilov; L. V. Yakimova; A. A. Pavlov; A. N. Belov; A. A. Raskin

doi:10.1134/S1063782616130078

Effect of ionic Ag⁺ transfer on localization of metal-assisted etching of silicon surface

Авторлар: Pyatilova O.¹, Sysa A.¹, Gavrilov S.¹, Yakimova L.¹, Pavlov A.², Belov A.¹, Raskin A.¹
Мекемелер:
1. National Research University of Electronic Technology
2. Institute of Nanotechnology Microelectronics
Шығарылым: Том 50, № 13 (2016)
Беттер: 1720-1725
Бөлім: Microelectronic and Nanoelectronic Technology
URL: https://journals.rcsi.science/1063-7826/article/view/199216
DOI: https://doi.org/10.1134/S1063782616130078
ID: 199216

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Аннотация

The specific features of fabrication of 3D silicon structures via local formation of a sacrificial porous silicon layer by metal-assisted chemical etching with 50- and 100-nm-thick silver films as a catalyst are studied. It is found that the mass transfer of Ag⁺ ions, caused by the temperature gradient, affects the surface morphology of the structure being formed, depending on the linear size of the mask-catalyst.