Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface
- Авторы: Pyatilova O.1, Sysa A.1, Gavrilov S.1, Yakimova L.1, Pavlov A.2, Belov A.1, Raskin A.1
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Учреждения:
- National Research University of Electronic Technology
- Institute of Nanotechnology Microelectronics
- Выпуск: Том 50, № 13 (2016)
- Страницы: 1720-1725
- Раздел: Microelectronic and Nanoelectronic Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/199216
- DOI: https://doi.org/10.1134/S1063782616130078
- ID: 199216
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Аннотация
The specific features of fabrication of 3D silicon structures via local formation of a sacrificial porous silicon layer by metal-assisted chemical etching with 50- and 100-nm-thick silver films as a catalyst are studied. It is found that the mass transfer of Ag+ ions, caused by the temperature gradient, affects the surface morphology of the structure being formed, depending on the linear size of the mask-catalyst.
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Об авторах
O. Pyatilova
National Research University of Electronic Technology
Автор, ответственный за переписку.
Email: 5ilova87@gmail.com
Россия, Moscow
A. Sysa
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Россия, Moscow
S. Gavrilov
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Россия, Moscow
L. Yakimova
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Россия, Moscow
A. Pavlov
Institute of Nanotechnology Microelectronics
Email: 5ilova87@gmail.com
Россия, Moscow
A. Belov
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Россия, Moscow
A. Raskin
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Россия, Moscow