Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface
- Authors: Pyatilova O.V.1, Sysa A.V.1, Gavrilov S.A.1, Yakimova L.V.1, Pavlov A.A.2, Belov A.N.1, Raskin A.A.1
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Affiliations:
- National Research University of Electronic Technology
- Institute of Nanotechnology Microelectronics
- Issue: Vol 50, No 13 (2016)
- Pages: 1720-1725
- Section: Microelectronic and Nanoelectronic Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/199216
- DOI: https://doi.org/10.1134/S1063782616130078
- ID: 199216
Cite item
Abstract
The specific features of fabrication of 3D silicon structures via local formation of a sacrificial porous silicon layer by metal-assisted chemical etching with 50- and 100-nm-thick silver films as a catalyst are studied. It is found that the mass transfer of Ag+ ions, caused by the temperature gradient, affects the surface morphology of the structure being formed, depending on the linear size of the mask-catalyst.
About the authors
O. V. Pyatilova
National Research University of Electronic Technology
Author for correspondence.
Email: 5ilova87@gmail.com
Russian Federation, Moscow
A. V. Sysa
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Russian Federation, Moscow
S. A. Gavrilov
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Russian Federation, Moscow
L. V. Yakimova
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Russian Federation, Moscow
A. A. Pavlov
Institute of Nanotechnology Microelectronics
Email: 5ilova87@gmail.com
Russian Federation, Moscow
A. N. Belov
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Russian Federation, Moscow
A. A. Raskin
National Research University of Electronic Technology
Email: 5ilova87@gmail.com
Russian Federation, Moscow