Мақаланы E-mail арқылы жіберу Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
- Авторлар: Cirlin G.1,2,3, Shtrom I.1,2,4, Reznik R.1,5, Samsonenko Y.1,2, Khrebtov A.1, Bouravleuv A.1,2,4, Soshnikov I.1,2,4,6
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Мекемелер:
- St. Petersburg Academic University, Russian Academy of Sciences
- Institute for Analytical Instrumentation
- ITMO University
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- St. Petersburg Electrotechnical University LETI
- Шығарылым: Том 50, № 11 (2016)
- Беттер: 1421-1424
- Бөлім: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198233
- DOI: https://doi.org/10.1134/S1063782616110257
- ID: 198233
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
Data on the growth features and physical properties of GaAs inserts embedded in AlGaAs nanowires grown on Si(111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelength range for both active and barrier regions. The technology proposed opens up new possibilities for the integration of direct-band III–V materials on silicon.
Авторлар туралы
G. Cirlin
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; ITMO University
Хат алмасуға жауапты Автор.
Email: cirlin@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 197101
I. Shtrom
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute
Email: cirlin@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021
R. Reznik
St. Petersburg Academic University, Russian Academy of Sciences; Peter the Great St. Petersburg Polytechnic University
Email: cirlin@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
Yu. Samsonenko
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation
Email: cirlin@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103
A. Khrebtov
St. Petersburg Academic University, Russian Academy of Sciences
Email: cirlin@beam.ioffe.ru
Ресей, St. Petersburg, 194021
A. Bouravleuv
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute
Email: cirlin@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021
I. Soshnikov
St. Petersburg Academic University, Russian Academy of Sciences; Institute for Analytical Instrumentation; Ioffe Physical–Technical Institute; St. Petersburg Electrotechnical University LETI
Email: cirlin@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 194021; St. Petersburg, 197376
