Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
- Авторлар: Tsatsulnikov A.1,2, Lundin W.1,2, Sakharov A.1,2, Zavarin E.1,2, Usov S.1,2, Nikolaev A.1,2, Yagovkina M.1, Ustinov V.1,2, Cherkashin N.3
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Мекемелер:
- Ioffe Physical–Technical Institute
- Submicron Heterostructures for Microelectronics, Research and Engineering Center
- CEMES–CNRS—Université de Toulouse
- Шығарылым: Том 50, № 9 (2016)
- Беттер: 1241-1247
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197932
- DOI: https://doi.org/10.1134/S1063782616090232
- ID: 197932
Дәйексөз келтіру
Аннотация
The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2", 3 × 2", and 6 × 2" is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.
Авторлар туралы
A. Tsatsulnikov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Хат алмасуға жауапты Автор.
Email: andrew@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
W. Lundin
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
A. Sakharov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
E. Zavarin
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
S. Usov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
A. Nikolaev
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
M. Yagovkina
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
Ресей, St. Petersburg, 194021
V. Ustinov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
N. Cherkashin
CEMES–CNRS—Université de Toulouse
Email: andrew@beam.ioffe.ru
Франция, Toulouse