Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
- 作者: Tsatsulnikov A.1,2, Lundin W.1,2, Sakharov A.1,2, Zavarin E.1,2, Usov S.1,2, Nikolaev A.1,2, Yagovkina M.1, Ustinov V.1,2, Cherkashin N.3
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隶属关系:
- Ioffe Physical–Technical Institute
- Submicron Heterostructures for Microelectronics, Research and Engineering Center
- CEMES–CNRS—Université de Toulouse
- 期: 卷 50, 编号 9 (2016)
- 页面: 1241-1247
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197932
- DOI: https://doi.org/10.1134/S1063782616090232
- ID: 197932
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详细
The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2", 3 × 2", and 6 × 2" is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.
作者简介
A. Tsatsulnikov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
编辑信件的主要联系方式.
Email: andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
W. Lundin
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
A. Sakharov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
E. Zavarin
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
S. Usov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
A. Nikolaev
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
M. Yagovkina
Ioffe Physical–Technical Institute
Email: andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
V. Ustinov
Ioffe Physical–Technical Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center
Email: andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
N. Cherkashin
CEMES–CNRS—Université de Toulouse
Email: andrew@beam.ioffe.ru
法国, Toulouse