Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates
- Авторлар: Nikolaev V.1,2,3, Pechnikov A.1,2, Stepanov S.2,4, Sharofidinov S.2,3, Golovatenko A.1,2,3, Nikitina I.3, Smirnov A.3, Bugrov V.2, Romanov A.2,3, Brunkov P.2,3, Kirilenko D.2,3
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Мекемелер:
- Perfect Crystals LLC
- ITMO university
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- Шығарылым: Том 50, № 7 (2016)
- Беттер: 980-983
- Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197519
- DOI: https://doi.org/10.1134/S1063782616070186
- ID: 197519
Дәйексөз келтіру
Аннотация
The method of chloride epitaxy is employed to grow β-Ga2O3 epitaxial layers on a c-sapphire substrate. Purified dry air is used as the source of oxygen. The layers are studied using the methods of X-ray diffraction, optical microscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman spectroscopy. It is found that the growth plane of the layers is (\(\bar 2\)01), parallel to the substrate surface. The layers consist of separate large crystalline grains of three different in-plane orientations rotated relative to each other in the growth plane by 60°. Misorientation can be caused by the different symmetry of the substrate and the epitaxial layer.
Авторлар туралы
V. Nikolaev
Perfect Crystals LLC; ITMO university; Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 194064; St. Petersburg, 197101; St. Petersburg, 194021
A. Pechnikov
Perfect Crystals LLC; ITMO university
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 194064; St. Petersburg, 197101
S. Stepanov
ITMO university; Peter the Great St. Petersburg Polytechnic University
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 197101; St. Petersburg, 195251
Sh. Sharofidinov
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 197101; St. Petersburg, 194021
A. Golovatenko
Perfect Crystals LLC; ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 194064; St. Petersburg, 197101; St. Petersburg, 194021
I. Nikitina
Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 194021
A. Smirnov
Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 194021
V. Bugrov
ITMO university
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 197101
A. Romanov
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 197101; St. Petersburg, 194021
P. Brunkov
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 197101; St. Petersburg, 194021
D. Kirilenko
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
Ресей, St. Petersburg, 197101; St. Petersburg, 194021