Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates
- 作者: Nikolaev V.1,2,3, Pechnikov A.1,2, Stepanov S.2,4, Sharofidinov S.2,3, Golovatenko A.1,2,3, Nikitina I.3, Smirnov A.3, Bugrov V.2, Romanov A.2,3, Brunkov P.2,3, Kirilenko D.2,3
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隶属关系:
- Perfect Crystals LLC
- ITMO university
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- 期: 卷 50, 编号 7 (2016)
- 页面: 980-983
- 栏目: Fabrication, Treatment, and Testing of Materials and Structures
- URL: https://journals.rcsi.science/1063-7826/article/view/197519
- DOI: https://doi.org/10.1134/S1063782616070186
- ID: 197519
如何引用文章
详细
The method of chloride epitaxy is employed to grow β-Ga2O3 epitaxial layers on a c-sapphire substrate. Purified dry air is used as the source of oxygen. The layers are studied using the methods of X-ray diffraction, optical microscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman spectroscopy. It is found that the growth plane of the layers is (\(\bar 2\)01), parallel to the substrate surface. The layers consist of separate large crystalline grains of three different in-plane orientations rotated relative to each other in the growth plane by 60°. Misorientation can be caused by the different symmetry of the substrate and the epitaxial layer.
作者简介
V. Nikolaev
Perfect Crystals LLC; ITMO university; Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 194064; St. Petersburg, 197101; St. Petersburg, 194021
A. Pechnikov
Perfect Crystals LLC; ITMO university
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 194064; St. Petersburg, 197101
S. Stepanov
ITMO university; Peter the Great St. Petersburg Polytechnic University
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 197101; St. Petersburg, 195251
Sh. Sharofidinov
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 197101; St. Petersburg, 194021
A. Golovatenko
Perfect Crystals LLC; ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 194064; St. Petersburg, 197101; St. Petersburg, 194021
I. Nikitina
Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 194021
A. Smirnov
Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 194021
V. Bugrov
ITMO university
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 197101
A. Romanov
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 197101; St. Petersburg, 194021
P. Brunkov
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 197101; St. Petersburg, 194021
D. Kirilenko
ITMO university; Ioffe Physical–Technical Institute
Email: vladimir.i.nikolaev@gmail.com
俄罗斯联邦, St. Petersburg, 197101; St. Petersburg, 194021