Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers

A. A. Yugov; S. S. Malahov; A. A. Donskov; M. P. Duhnovskii; S. N. Knyazev; Yu. P. Kozlova; T. G. Yugova; I. A. Belogorokhov

doi:10.1134/S1063782616030246

Effect of the Ti-Nanolayer Thickness on the Self-Lift-off of Thick GaN Epitaxial Layers

Авторлар: Yugov A.¹, Malahov S.¹, Donskov A.¹, Duhnovskii M.², Knyazev S.¹, Kozlova Y.³, Yugova T.¹, Belogorokhov I.¹
Мекемелер:
1. State Research and Project Institute of Rare-Metal Industry GIREDMET
2. Research and Production Corporation “Istok”
3. Institute for Nuclear Research, Russian Academy of Sciences
Шығарылым: Том 50, № 3 (2016)
Беттер: 411-414
Бөлім: Fabrication, Treatment, and Testing of Materials and Structures
URL: https://journals.rcsi.science/1063-7826/article/view/196932
DOI: https://doi.org/10.1134/S1063782616030246
ID: 196932

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Аннотация

The effect of the type of substrate, sapphire substrate (c- and r-orientation) or GaN/Al₂O₃ template (c- and r-orientations), on the nitridation of an amorphous titanium nanolayer is shown. The effect of the titanium-nanolayer thickness on thick GaN epitaxial layer self-separation from the substrate is revealed. The titanium-nanolayer thickness at which thick GaN layer is reproducibly self-separated is within 20–40 nm.