Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Il’inskaya, N.
Issue
Section
Title
File
Vol 50, No 5 (2016)
Physics of Semiconductor Devices
Photodiode 1 × 64 linear array based on a double
p
-InAsSbP/
n
-InAs
0.92
Sb
0.08
/
n
+
-InAs heterostructure
Vol 50, No 6 (2016)
Physics of Semiconductor Devices
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect
Vol 51, No 2 (2017)
Physics of Semiconductor Devices
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Vol 52, No 8 (2018)
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Photoconductivity Amplification in a Type-II
n
-GaSb/InAs/
p
-GaSb Heterostructure with a Single QW
Vol 52, No 9 (2018)
Physics of Semiconductor Devices
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range
Vol 53, No 6 (2019)
Physics of Semiconductor Devices
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO
2
(λ = 4.3 μm) and CO (λ = 4.7 μm) Detection
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