Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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For Authors
For Librarians
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Author Details
Author Details
Vexler, M.
Issue
Section
Title
File
Vol 50, No 5 (2016)
Physics of Semiconductor Devices
Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-
K
oxide/SiO
2
/Si structure
Vol 51, No 4 (2017)
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling
Vol 52, No 2 (2018)
Physics of Semiconductor Devices
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures
Vol 52, No 8 (2018)
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System
Vol 52, No 10 (2018)
Physics of Semiconductor Devices
Analysis of the Features of Hot-Carrier Degradation in FinFETs
Vol 52, No 13 (2018)
Physics of Semiconductor Devices
Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs
Vol 53, No 6 (2019)
Physics of Semiconductor Devices
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer
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