Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Grekhov, M.
Issue
Section
Title
File
Vol 50, No 2 (2016)
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates
Vol 50, No 4 (2016)
Fabrication, Treatment, and Testing of Materials and Structures
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode
Vol 51, No 3 (2017)
Spectroscopy, Interaction with Radiation
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
Vol 51, No 4 (2017)
Physics of Semiconductor Devices
Terahertz radiation in In
0.38
Ga
0.62
As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
Vol 52, No 6 (2018)
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al
0.32
Ga
0.68
N HEMT-Heterostructures by the Williamson–Hall Method
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