Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Trapeznikova, I. N.
Issue
Section
Title
File
Vol 50, No 4 (2016)
Physics of Semiconductor Devices
On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix
a
-SiO
x
:H (0 <
x
< 2) with time-modulated dc magnetron plasma
Vol 51, No 1 (2017)
Fabrication, Treatment, and Testing of Materials and Structures
Surface texture of single-crystal silicon oxidized under a thin V
2
O
5
layer
Vol 52, No 10 (2018)
Amorphous, Vitreous, and Organic Semiconductors
Effect of the Temporal Characteristics of Modulated DC Plasma with the (SiH
4
–Ar–O
2
) Gas Phase on ncl-Si Growth in an
a
-SiO
x
:H matrix (
\({{C}_{{{{{\text{O}}}_{{\text{2}}}}}}}\)
= 15.5 mol %)
Vol 53, No 8 (2019)
Physics of Semiconductor Devices
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass
Vol 53, No 11 (2019)
Amorphous, Vitreous, and Organic Semiconductors
Formation of
ncl
-Si in the Amorphous Matrix
a
-SiO
x
:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH
4
–Ar–O
2
) Gas Phase (
\({{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}\)
= 21.5 mol %)
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