Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Tetelbaum, D.
Issue
Section
Title
File
Vol 50, No 2 (2016)
Fabrication, Treatment, and Testing of Materials and Structures
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
Vol 52, No 7 (2018)
Spectroscopy, Interaction with Radiation
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si
+
Ion Implantation
Vol 52, No 9 (2018)
Spectroscopy, Interaction with Radiation
Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions
Vol 52, No 12 (2018)
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
Behavioral Features of MIS Memristors with a Si
3
N
4
Nanolayer Fabricated on a Conductive Si Substrate
Vol 53, No 8 (2019)
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
Diffusion and Interaction of In and As Implanted into SiO
2
Films
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