| Issue |
Section |
Title |
File |
| Vol 50, No 8 (2016) |
Physics of Semiconductor Devices |
Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE |
|
| Vol 52, No 13 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations |
|
| Vol 53, No 8 (2019) |
Physics of Semiconductor Devices |
Sensing Amorphous/Crystalline Silicon Surface Passivation by Attenuated Total Reflection Infrared Spectroscopy of Amorphous Silicon on Glass |
|
