Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
- Authors: Bushuykin P.A.1, Novikov A.V.1,2, Andreev B.A.1,2, Lobanov D.N.1,2, Yunin P.A.1, Skorokhodov E.V.1, Krasil’nikova L.V.1,2, Demidov E.V.1, Savchenko G.M.3, Davydov V.Y.3
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Affiliations:
- Institute for Physics of Microstructures
- Nizhny Novgorod State University
- Ioffe Institute
- Issue: Vol 51, No 12 (2017)
- Pages: 1537-1541
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201963
- DOI: https://doi.org/10.1134/S1063782617120041
- ID: 201963
Cite item
Abstract
The results of studies of the photoexcitation spectra of epitaxial InN layers formed by molecular-beam epitaxy with the plasma activation of nitrogen are reported. The concentration of free charge carriers in the layers is 1018–1019 cm–3. The photoconductivity, photoluminescence, and absorption spectra exhibit a shift of the long-wavelength threshold of interband transitions in accordance with the Burstein–Moss effect for n-InN with different concentrations of equilibrium electrons. In the samples, absolute negative photoconductivity with a nanosecond relaxation time is observed. The results of photoelectric, absorption, and luminescence spectroscopy experiments are correlated with the technological parameters and electron microscopy data.
About the authors
P. A. Bushuykin
Institute for Physics of Microstructures
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
A. V. Novikov
Institute for Physics of Microstructures; Nizhny Novgorod State University
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
B. A. Andreev
Institute for Physics of Microstructures; Nizhny Novgorod State University
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
D. N. Lobanov
Institute for Physics of Microstructures; Nizhny Novgorod State University
Author for correspondence.
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
P. A. Yunin
Institute for Physics of Microstructures
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
E. V. Skorokhodov
Institute for Physics of Microstructures
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
L. V. Krasil’nikova
Institute for Physics of Microstructures; Nizhny Novgorod State University
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
E. V. Demidov
Institute for Physics of Microstructures
Email: dima@ipmras.ru
Russian Federation, Nizhny Novgorod, 603950
G. M. Savchenko
Ioffe Institute
Email: dima@ipmras.ru
Russian Federation, St. Petersburg, 194021
V. Yu. Davydov
Ioffe Institute
Email: dima@ipmras.ru
Russian Federation, St. Petersburg, 194021