Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
- Authors: Murel A.V.1, Shmagin V.B.1, Krukov V.L.2, Strelchenko S.S.2, Surovegina E.A.1, Shashkin V.I.1
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Affiliations:
- Institute of Physics of Microstructures
- OOO “MeGa Epitech”
- Issue: Vol 51, No 11 (2017)
- Pages: 1485-1489
- Section: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201727
- DOI: https://doi.org/10.1134/S1063782617110197
- ID: 201727
Cite item
Abstract
Three deep acceptor levels with activation energies of ~0.7, ~0.41, and ~0.16 eV are found in GaAs structures, which have the hole type of conductivity and are grown by liquid-phase epitaxy, by the methods of capacitance spectroscopy (admittance spectroscopy and deep-level transient spectroscopy). The first two levels are known as HL2 and HL5 and are related to the features of GaAs-layer growth by liquid-phase epitaxy. They are effective recombination centers determining reverse currents in p–i–n diodes, which is confirmed by studying the temperature dependences of reverse currents. The level with the energy Ev + 0.16 eV can be related to the two-charge acceptor level of the inherent antisite defect in GaAs, which also determines the doping concentration of structures in the singly charged state.
About the authors
A. V. Murel
Institute of Physics of Microstructures
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603087
V. B. Shmagin
Institute of Physics of Microstructures
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603087
V. L. Krukov
OOO “MeGa Epitech”
Email: suroveginaka@ipmras.ru
Russian Federation, Kaluga, 248033
S. S. Strelchenko
OOO “MeGa Epitech”
Email: suroveginaka@ipmras.ru
Russian Federation, Kaluga, 248033
E. A. Surovegina
Institute of Physics of Microstructures
Author for correspondence.
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603087
V. I. Shashkin
Institute of Physics of Microstructures
Email: suroveginaka@ipmras.ru
Russian Federation, Nizhny Novgorod, 603087