Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
- Authors: Ponomarev D.S.1, Khabibullin R.A.1, Yachmenev A.E.1, Maltsev P.P.1, Grekhov M.M.2, Ilyakov I.E.3, Shishkin B.V.3, Akhmedzhanov R.A.3
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Affiliations:
- Institute of Ultrahigh Frequency Semiconductor Electronics
- National Research Nuclear University “MEPhI”
- Institute of Applied Physics
- Issue: Vol 51, No 4 (2017)
- Pages: 509-513
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199770
- DOI: https://doi.org/10.1134/S1063782617040170
- ID: 199770
Cite item
Abstract
The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In0.38Ga0.62As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10–5 at a rather low optical fluence of ~40 μJ/cm2, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.
About the authors
D. S. Ponomarev
Institute of Ultrahigh Frequency Semiconductor Electronics
Author for correspondence.
Email: ponomarev_dmitr@mail.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
R. A. Khabibullin
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
A. E. Yachmenev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
P. P. Maltsev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Russian Federation, Nagornyi pr. 7, str. 5, Moscow, 117105
M. M. Grekhov
National Research Nuclear University “MEPhI”
Email: ponomarev_dmitr@mail.ru
Russian Federation, Kashirskoe sh. 31, Moscow, 115409
I. E. Ilyakov
Institute of Applied Physics
Email: ponomarev_dmitr@mail.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
B. V. Shishkin
Institute of Applied Physics
Email: ponomarev_dmitr@mail.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
R. A. Akhmedzhanov
Institute of Applied Physics
Email: ponomarev_dmitr@mail.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950