Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
- Autores: Ponomarev D.1, Khabibullin R.1, Yachmenev A.1, Maltsev P.1, Grekhov M.2, Ilyakov I.3, Shishkin B.3, Akhmedzhanov R.3
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Afiliações:
- Institute of Ultrahigh Frequency Semiconductor Electronics
- National Research Nuclear University “MEPhI”
- Institute of Applied Physics
- Edição: Volume 51, Nº 4 (2017)
- Páginas: 509-513
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199770
- DOI: https://doi.org/10.1134/S1063782617040170
- ID: 199770
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Resumo
The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In0.38Ga0.62As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10–5 at a rather low optical fluence of ~40 μJ/cm2, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.
Sobre autores
D. Ponomarev
Institute of Ultrahigh Frequency Semiconductor Electronics
Autor responsável pela correspondência
Email: ponomarev_dmitr@mail.ru
Rússia, Nagornyi pr. 7, str. 5, Moscow, 117105
R. Khabibullin
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Rússia, Nagornyi pr. 7, str. 5, Moscow, 117105
A. Yachmenev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Rússia, Nagornyi pr. 7, str. 5, Moscow, 117105
P. Maltsev
Institute of Ultrahigh Frequency Semiconductor Electronics
Email: ponomarev_dmitr@mail.ru
Rússia, Nagornyi pr. 7, str. 5, Moscow, 117105
M. Grekhov
National Research Nuclear University “MEPhI”
Email: ponomarev_dmitr@mail.ru
Rússia, Kashirskoe sh. 31, Moscow, 115409
I. Ilyakov
Institute of Applied Physics
Email: ponomarev_dmitr@mail.ru
Rússia, ul. Ul’yanova 46, Nizhny Novgorod, 603950
B. Shishkin
Institute of Applied Physics
Email: ponomarev_dmitr@mail.ru
Rússia, ul. Ul’yanova 46, Nizhny Novgorod, 603950
R. Akhmedzhanov
Institute of Applied Physics
Email: ponomarev_dmitr@mail.ru
Rússia, ul. Ul’yanova 46, Nizhny Novgorod, 603950