Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields
- Authors: Veinger A.I.1, Tisnek T.V.1, Kochman I.V.1, Okulov V.I.2
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Affiliations:
- Ioffe Physical–Technical Institute
- Mikheev Institute of Metal Physics
- Issue: Vol 51, No 2 (2017)
- Pages: 163-167
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199415
- DOI: https://doi.org/10.1134/S1063782617020233
- ID: 199415
Cite item
Abstract
The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.
About the authors
A. I. Veinger
Ioffe Physical–Technical Institute
Author for correspondence.
Email: Anatoly.Veinger@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
T. V. Tisnek
Ioffe Physical–Technical Institute
Email: Anatoly.Veinger@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. V. Kochman
Ioffe Physical–Technical Institute
Email: Anatoly.Veinger@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
V. I. Okulov
Mikheev Institute of Metal Physics
Email: Anatoly.Veinger@mail.ioffe.ru
Russian Federation, Yekaterinburg, 620137