Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields

A. I. Veinger; T. V. Tisnek; I. V. Kochman; V. I. Okulov

doi:10.1134/S1063782617020233

Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields

Autores: Veinger A.¹, Tisnek T.¹, Kochman I.¹, Okulov V.²
Afiliações:
1. Ioffe Physical–Technical Institute
2. Mikheev Institute of Metal Physics
Edição: Volume 51, Nº 2 (2017)
Páginas: 163-167
Seção: Electronic Properties of Semiconductors
URL: https://journals.rcsi.science/1063-7826/article/view/199415
DOI: https://doi.org/10.1134/S1063782617020233
ID: 199415

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The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.