Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
- Authors: Daniltsev V.M.1, Demidov E.V.1, Drozdov M.N.1,2, Drozdov Y.N.1,2, Kraev S.A.1, Surovegina E.A.1, Shashkin V.I.1,2, Yunin P.A.1,2
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Affiliations:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Issue: Vol 50, No 11 (2016)
- Pages: 1439-1442
- Section: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198265
- DOI: https://doi.org/10.1134/S1063782616110075
- ID: 198265
Cite item
Abstract
The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 1021 cm–3 without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 1019 cm–3) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10–6 Ω cm2) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 1020 cm–3 are detected.
About the authors
V. M. Daniltsev
Institute for Physics of Microstructures
Email: drozdyu@ipmras.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
E. V. Demidov
Institute for Physics of Microstructures
Email: drozdyu@ipmras.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
M. N. Drozdov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: drozdyu@ipmras.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
Yu. N. Drozdov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: drozdyu@ipmras.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
S. A. Kraev
Institute for Physics of Microstructures
Email: drozdyu@ipmras.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
E. A. Surovegina
Institute for Physics of Microstructures
Email: drozdyu@ipmras.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950
V. I. Shashkin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: drozdyu@ipmras.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
P. A. Yunin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: drozdyu@ipmras.ru
Russian Federation, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950