Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
- Авторлар: Daniltsev V.1, Demidov E.1, Drozdov M.1,2, Drozdov Y.1,2, Kraev S.1, Surovegina E.1, Shashkin V.1,2, Yunin P.1,2
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Мекемелер:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Шығарылым: Том 50, № 11 (2016)
- Беттер: 1439-1442
- Бөлім: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198265
- DOI: https://doi.org/10.1134/S1063782616110075
- ID: 198265
Дәйексөз келтіру
Аннотация
The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of 1021 cm–3 without appreciable diffusion and segregation effects. Good carrier concentrations (2 × 1019 cm–3) and specific contact resistances of non-alloyed ohmic contacts (1.7 × 10–6 Ω cm2) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 × 1020 cm–3 are detected.
Авторлар туралы
V. Daniltsev
Institute for Physics of Microstructures
Email: drozdyu@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950
E. Demidov
Institute for Physics of Microstructures
Email: drozdyu@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950
M. Drozdov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: drozdyu@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
Yu. Drozdov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: drozdyu@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
S. Kraev
Institute for Physics of Microstructures
Email: drozdyu@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950
E. Surovegina
Institute for Physics of Microstructures
Email: drozdyu@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950
V. Shashkin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: drozdyu@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
P. Yunin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: drozdyu@ipmras.ru
Ресей, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950