Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide
- Authors: Mikhaylov A.I.1,2, Afanasyev A.V.1, Ilyin V.A.1, Luchinin V.V.1, Sledziewski T.3, Reshanov S.A.4, Schöner A.4, Krieger M.3
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Affiliations:
- St. Petersburg State Electrotechnical University LETI
- Acreo Swedish ICT AB
- Friedrich–Alexander–Universität Erlangen–Nürnberg
- Ascatron AB
- Issue: Vol 50, No 1 (2016)
- Pages: 103-105
- Section: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196694
- DOI: https://doi.org/10.1134/S1063782616010152
- ID: 196694
Cite item
Abstract
The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO2 interface and in the bulk of silicon dioxide.
About the authors
A. I. Mikhaylov
St. Petersburg State Electrotechnical University LETI; Acreo Swedish ICT AB
Author for correspondence.
Email: m.aleksey.spb@gmail.com
Russian Federation, St. Petersburg, 197376; Kista, 16440
A. V. Afanasyev
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Russian Federation, St. Petersburg, 197376
V. A. Ilyin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Russian Federation, St. Petersburg, 197376
V. V. Luchinin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Russian Federation, St. Petersburg, 197376
T. Sledziewski
Friedrich–Alexander–Universität Erlangen–Nürnberg
Email: m.aleksey.spb@gmail.com
Germany, Erlangen, 91058
S. A. Reshanov
Ascatron AB
Email: m.aleksey.spb@gmail.com
Sweden, Kista, 16440
A. Schöner
Ascatron AB
Email: m.aleksey.spb@gmail.com
Sweden, Kista, 16440
M. Krieger
Friedrich–Alexander–Universität Erlangen–Nürnberg
Email: m.aleksey.spb@gmail.com
Germany, Erlangen, 91058