Specific features of the current–voltage characteristics of SiO2/4H-SiC MIS structures with phosphorus implanted into silicon carbide
- Autores: Mikhaylov A.1,2, Afanasyev A.1, Ilyin V.1, Luchinin V.1, Sledziewski T.3, Reshanov S.4, Schöner A.4, Krieger M.3
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Afiliações:
- St. Petersburg State Electrotechnical University LETI
- Acreo Swedish ICT AB
- Friedrich–Alexander–Universität Erlangen–Nürnberg
- Ascatron AB
- Edição: Volume 50, Nº 1 (2016)
- Páginas: 103-105
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196694
- DOI: https://doi.org/10.1134/S1063782616010152
- ID: 196694
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Resumo
The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO2 interface and in the bulk of silicon dioxide.
Sobre autores
A. Mikhaylov
St. Petersburg State Electrotechnical University LETI; Acreo Swedish ICT AB
Autor responsável pela correspondência
Email: m.aleksey.spb@gmail.com
Rússia, St. Petersburg, 197376; Kista, 16440
A. Afanasyev
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Rússia, St. Petersburg, 197376
V. Ilyin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Rússia, St. Petersburg, 197376
V. Luchinin
St. Petersburg State Electrotechnical University LETI
Email: m.aleksey.spb@gmail.com
Rússia, St. Petersburg, 197376
T. Sledziewski
Friedrich–Alexander–Universität Erlangen–Nürnberg
Email: m.aleksey.spb@gmail.com
Alemanha, Erlangen, 91058
S. Reshanov
Ascatron AB
Email: m.aleksey.spb@gmail.com
Suécia, Kista, 16440
A. Schöner
Ascatron AB
Email: m.aleksey.spb@gmail.com
Suécia, Kista, 16440
M. Krieger
Friedrich–Alexander–Universität Erlangen–Nürnberg
Email: m.aleksey.spb@gmail.com
Alemanha, Erlangen, 91058