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Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
Sakharov A.V., Kaliteevskii M.A., Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Tsatsulnikov A.F., Lundin W.V., Rodin S.N., Usov S.O., Evtikhiev V.P.
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
Levitskii Y.V., Mitrofanov M.I., Voznyuk G.V., Nikolayev D.N., Mizerov M.N., Evtikhiev V.P.
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