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Vol 53, No 11 (2019)
Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions
Davydov V.Y., Jmerik V.N., Roginskii E.M., Kitaev Y.E., Beltukov Y.M., Smirnov M.B., Nechaev D.V., Smirnov A.N., Eliseyev I.A., Brunkov P.N., Ivanov S.V.
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(Eng)
Vol 53, No 8 (2019)
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Seredin P.V., Goloshchapov D.L., Zolotukhin D.S., Lenshin A.S., Mizerov A.M., Arsentyev I.N., Leiste H., Rinke M.
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(Eng)
Vol 52, No 11 (2018)
Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon
Cirlin G.E., Reznik R.R., Samsonenko Y.B., Khrebtov A.I., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kirilenko D.A., Kryzhanovskaya N.V.
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(Eng)
Vol 50, No 13 (2016)
Study of the structure and composition of the strained epitaxial layer in the InAlAs/GaAs(100) heterostructure by transmission electron microscopy
Lovygin M.V., Borgardt N.I., Bugaev A.S., Volkov R.L., Seibt M.
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(Eng)
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