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Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
Lobanov D.N., Novikov A.V., Andreev B.A., Bushuykin P.A., Yunin P.A., Skorohodov E.V., Krasilnikova L.V.
Structural, Thermal and Luminescence Properties of AlN:Tm Thin Films Deposited on Silicon Substrate and Optical Fiber
Muhammad Maqbool , Alruwaili A., Milinovic D., Khan T., Ali G., Ahmad I.
On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
Sharofidinov S.S., Nikolaev V.I., Smirnov A.N., Chikiryaka A.V., Nikitina I.P., Odnoblyudov M.A., Bugrov V.E., Romanov A.E.
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