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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Author Details

Vasilyev, Yu. B.

Issue Section Title File
Vol 50, No 7 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure
Vol 51, No 5 (2017) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Injection-induced terahertz electroluminescence from silicon p–n structures
Vol 52, No 8 (2018) Physics of Semiconductor Devices On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation
Vol 53, No 7 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers
Vol 53, No 12 (2019) Carbon Systems Edge Doping in Graphene Devices on SiO2 Substrates
 

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