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Автор туралы ақпарат

Varavin, V. S.

Шығарылым Бөлім Атауы Файл
Том 50, № 2 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
Том 50, № 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
Том 50, № 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells
Том 52, № 6 (2018) Electronic Properties of Semiconductors Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
Том 53, № 9 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature