| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
|
| Volume 50, Nº 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures |
|
| Volume 50, Nº 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Mercury vacancies as divalent acceptors in HgyTe1 – y/CdxHg1 – xTe structures with quantum wells |
|
| Volume 52, Nº 6 (2018) |
Electronic Properties of Semiconductors |
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method |
|
| Volume 53, Nº 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature |
|
