Author Details
Yurkov, S.
Issue | Section | Title | File |
Vol 50, No 3 (2016) | Physics of Semiconductor Devices | High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base | |
Vol 51, No 2 (2017) | Physics of Semiconductor Devices | Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors | |
Vol 51, No 8 (2017) | Physics of Semiconductor Devices | Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |