Informaçao sobre o Autor

Il’inskaya, N. D.

Edição	Seção	Título	Arquivo
Volume 50, Nº 5 (2016)	Physics of Semiconductor Devices	Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs_0.92Sb_0.08/n⁺-InAs heterostructure
Volume 50, Nº 6 (2016)	Physics of Semiconductor Devices	Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect
Volume 51, Nº 2 (2017)	Physics of Semiconductor Devices	Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Volume 52, Nº 8 (2018)	Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena	Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW
Volume 52, Nº 9 (2018)	Physics of Semiconductor Devices	GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range
Volume 53, Nº 6 (2019)	Physics of Semiconductor Devices	Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO₂ (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection