| Edição |
Seção |
Título |
Arquivo |
| Volume 50, Nº 7 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth |
|
| Volume 50, Nº 7 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy |
|
| Volume 51, Nº 8 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates |
|
| Volume 51, Nº 9 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the delta-type doping of GaAs-based heterostructures with manganese compounds |
|
| Volume 53, Nº 3 (2019) |
Review |
Discovery of III–V Semiconductors: Physical Properties and Application |
|
| Volume 53, Nº 16 (2019) |
Nanostructures Technology |
The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots |
|
