Informaçao sobre o Autor
Moiseev, K. D.
Edição | Seção | Título | Arquivo |
Volume 50, Nº 7 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth | |
Volume 50, Nº 7 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy | |
Volume 51, Nº 8 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates | |
Volume 51, Nº 9 (2017) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | On the delta-type doping of GaAs-based heterostructures with manganese compounds | |
Volume 53, Nº 3 (2019) | Review | Discovery of III–V Semiconductors: Physical Properties and Application | |
Volume 53, Nº 16 (2019) | Nanostructures Technology | The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots |