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Автор туралы ақпарат

Bodnar, I. V.

Шығарылым Бөлім Атауы Файл
Том 50, № 2 (2016) Electronic Properties of Semiconductors Compositional dependence of the band gap of (CuIn5S8)1–x · (FeIn2S4)x alloys
Том 50, № 5 (2016) Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) Anisotropy of the thermal expansion of CuIn5Se8 single crystals in two structural modifications
Том 50, № 6 (2016) Electronic Properties of Semiconductors Optical properties of In2Se3 thin films
Том 50, № 9 (2016) Electronic Properties of Semiconductors Temperature dependence of the band gap of the single-crystal compounds In2S3 and AgIn5S8
Том 51, № 3 (2017) Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) Single crystals of (FeIn2S4)x · (CuIn5S8)1–x alloys: Crystal structure, nuclear gamma resonance spectra, and thermal expansion
Том 51, № 8 (2017) Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) Mn0.1Ag0.9In4.7S7.6 single crystals: Crystal structure, band gap, and thermal expansion
Том 51, № 10 (2017) Fabrication, Treatment, and Testing of Materials and Structures (FeIn2S4)x · (AgIn5S8)1–x alloys: Crystal structure, nuclear γ-Resonance spectra, and band gap
Том 52, № 8 (2018) Fabrication, Treatment, and Testing of Materials and Structures Crystal Structure and Band Gap of (MnIn2S4)1–x • (AgIn5S8)x Alloys
Том 52, № 10 (2018) Fabrication, Treatment, and Testing of Materials and Structures On the Growth of FeIn2S2Se2 Single Crystals and the Study of their Properties
Том 53, № 12 (2019) Electronic Properties of Semiconductors Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals