Author Details
Gajiev, G. M.
| Issue | Section | Title | File |
| Vol 51, No 3 (2017) | Physics of Semiconductor Devices | Specific features of the capacitance–voltage characteristics of a Cu–SiO2–p-InSb MIS structure | |
| Vol 53, No 12 (2019) | Electronic Properties of Semiconductors | On the Characteristic Features of the Impurity Energy Spectrum in Arsenides |