Author Details

Usikova, A. A.

Issue Section Title File
Vol 50, No 5 (2016) Physics of Semiconductor Devices Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure
Vol 50, No 6 (2016) Physics of Semiconductor Devices Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect
Vol 50, No 10 (2016) Physics of Semiconductor Devices On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm
Vol 51, No 2 (2017) Physics of Semiconductor Devices Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Vol 52, No 1 (2018) Fabrication, Treatment, and Testing of Materials and Structures Investigation of the Modified Structure of a Quantum Cascade Laser
Vol 52, No 5 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands
Vol 52, No 6 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers
Vol 52, No 12 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers
Vol 53, No 7 (2019) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers

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