| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 5 (2016) |
Physics of Semiconductor Devices |
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure |
|
| Том 50, № 6 (2016) |
Physics of Semiconductor Devices |
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect |
|
| Том 50, № 10 (2016) |
Physics of Semiconductor Devices |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm |
|
| Том 51, № 2 (2017) |
Physics of Semiconductor Devices |
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures |
|
| Том 52, № 1 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of the Modified Structure of a Quantum Cascade Laser |
|
| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands |
|
| Том 52, № 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers |
|
| Том 52, № 12 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Ridge Waveguide Structure for Lattice-Matched Quantum Cascade Lasers |
|
| Том 53, № 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers |
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