Author Details
Sushkov, A. A.
| Issue | Section | Title | File |
| Vol 51, No 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates | |
| Vol 53, No 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures | |
| Vol 53, No 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate |