| Issue |
Section |
Title |
File |
| Vol 50, No 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs |
|
| Vol 50, No 10 (2016) |
Physics of Semiconductor Devices |
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures |
|
| Vol 50, No 10 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation |
|
| Vol 51, No 4 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures |
|
| Vol 51, No 9 (2017) |
Physics of Semiconductor Devices |
Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation |
|
