| Issue |
Section |
Title |
File |
| Vol 50, No 10 (2016) |
Surfaces, Interfaces, and Thin Films |
The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interface |
|
| Vol 51, No 3 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types |
|
| Vol 51, No 5 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice |
|
| Vol 51, No 11 (2017) |
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 |
MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate |
|
| Vol 52, No 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology |
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates |
|
| Vol 52, No 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution |
|
| Vol 53, No 2 (2019) |
Surfaces, Interfaces, and Thin Films |
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers |
|
