| Issue |
Section |
Title |
File |
| Vol 51, No 1 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Diffusion of interstitial magnesium in dislocation-free silicon |
|
| Vol 51, No 8 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
High-temperature diffusion of magnesium in dislocation-free silicon |
|
| Vol 53, No 3 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon |
|
| Vol 53, No 6 (2019) |
Electronic Properties of Semiconductors |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
|
| Vol 53, No 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission |
|
