期 |
标题 |
文件 |
卷 51, 编号 2 (2017) |
Raman scattering in InP doped by Be+-ion implantation |
 (Eng)
|
Avakyants L., Bokov P., Chervyakov A.
|
卷 50, 编号 10 (2016) |
Reflectance of a PbSb2Te4 crystal in a wide spectral range |
 (Eng)
|
Nemov S., Ulashkevich Y., Povolotskii A., Khlamov I.
|
卷 50, 编号 10 (2016) |
UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impurities |
 (Eng)
|
Mezdrogina M., Vinogradov A., Kuzmin R., Levitski V., Kozanova Y., Lyanguzov N., Chukichev M.
|
卷 50, 编号 10 (2016) |
Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emission |
 (Eng)
|
Ageeva N., Bronevoi I., Zabegaev D., Krivonosov A.
|
卷 50, 编号 9 (2016) |
Plasmon–phonon coupling in the infrared reflectance spectra of Bi2Se3 films |
 (Eng)
|
Novikova N., Yakovlev V., Kucherenko I.
|
卷 50, 编号 8 (2016) |
Spectra of low-temperature photoluminescence in thin polycrystalline CdTe films |
 (Eng)
|
Polvonov B., Yuldashev N.
|
卷 50, 编号 7 (2016) |
Effect of coulomb correlations on luminescence and absorption in compensated semiconductors |
 (Eng)
|
Bogoslovskiy N., Petrov P., Ivánov Y., Averkiev N., Tsendin K.
|
卷 50, 编号 5 (2016) |
Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate |
 (Eng)
|
Aleshkin V., Dubinov A., Kudryavtsev K., Yunin P., Drozdov M., Vikhrova O., Nekorkin S., Zvonkov B.
|
卷 50, 编号 4 (2016) |
Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons |
 (Eng)
|
Kumekov S., Mustafin A., Mussatay S.
|
卷 50, 编号 2 (2016) |
Photoluminescence properties of thallium-containing GeSe2 and GeSe3 vitreous semiconductors |
 (Eng)
|
Babaev A.
|
卷 50, 编号 1 (2016) |
Structure and optical properties of ZnO with silver nanoparticles |
 (Eng)
|
Lyadov N., Gumarov A., Kashapov R., Noskov A., Valeev V., Nuzhdin V., Bazarov V., Khaibullin R., Faizrakhmanov I.
|
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