Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
- Autores: Sakharov A.1, Kaliteevskii M.2, Voznyuk G.1,2, Levitskii I.1,3, Mitrofanov M.1, Tsatsulnikov A.3, Lundin W.1, Rodin S.1, Usov S.3, Evtikhiev V.1
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Afiliações:
- Ioffe Institute
- ITMO University
- Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
- Edição: Volume 53, Nº 16 (2019)
- Páginas: 2121-2124
- Seção: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207612
- DOI: https://doi.org/10.1134/S106378261912025X
- ID: 207612
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Resumo
The effect of annealing temperature and time on the luminescence intensity of the InGaN/GaN heterostructure subjected to ion beam etching was studied. We show that annealing at a temperature of 1100°C makes it possible to eliminate the radiation defects in the GaN layers that arise in the etching process with a focused Ga+ ion beam (30 keV).
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Sobre autores
A. Sakharov
Ioffe Institute
Autor responsável pela correspondência
Email: val@beam.ioffe.ru
Rússia, St. Petersburg, 194021
M. Kaliteevskii
ITMO University
Autor responsável pela correspondência
Email: m.kaliteevskii@mail.ru
Rússia, St. Petersburg
G. Voznyuk
Ioffe Institute; ITMO University
Autor responsável pela correspondência
Email: glebufa0@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg
I. Levitskii
Ioffe Institute; Submicron Heterostructures for Microelectronics, Research and Engineering Center,Russian Academy of Sciences
Autor responsável pela correspondência
Email: levitskyar@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg
M. Mitrofanov
Ioffe Institute
Autor responsável pela correspondência
Email: maxi.mitrofanov@gmail.com
Rússia, St. Petersburg, 194021
A. Tsatsulnikov
Submicron Heterostructures for Microelectronics, Research and Engineering Center,Russian Academy of Sciences
Autor responsável pela correspondência
Email: andrew@beam.ioffe.ru
Rússia, St. Petersburg
W. Lundin
Ioffe Institute
Autor responsável pela correspondência
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021
S. Rodin
Ioffe Institute
Autor responsável pela correspondência
Email: s_rodin77@mail.ru
Rússia, St. Petersburg, 194021
S. Usov
Submicron Heterostructures for Microelectronics, Research and Engineering Center,Russian Academy of Sciences
Autor responsável pela correspondência
Email: s.usov@mail.ioffe.ru
Rússia, St. Petersburg
V. Evtikhiev
Ioffe Institute
Autor responsável pela correspondência
Email: Evtikhiev@mail.ioffe.ru
Rússia, St. Petersburg, 194021